FDY2000PZ
Manufacturer:
On Semiconductor
Mfr.Part #:
FDY2000PZ
Datasheet:
Description:
MOSFETs SOT-563-6 SMD/SMT P-Channel number of channels:2 630 mW -20 V Continuous Drain Current (ID):350 mA 1.4 nC
| Parameter | Value |
|---|---|
| Length | 1.7 mm |
| Width | 1.2 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 6 |
| Height | 600 µm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 2 |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 625 mW |
| Power Dissipation | 630 mW |
| Threshold Voltage | -1.03 V |
| Number of Channels | 2 |
| Input capacitance | 100 pF |
| Continuous Drain Current (ID) | 350 mA |
| Rds On Max | 1.2 Ω |
| Drain to Source Voltage (Vdss) | 20 V |
| Turn-On Delay Time | 6 ns |
| Turn-Off Delay Time | 8 ns |
| Element Configuration | Dual |
| Fall Time | 13 ns |
| Rise Time | 13 ns |
| Gate Charge | 1.4 nC |
| Drain to Source Resistance | 1.2 Ω |
| Gate to Source Voltage (Vgs) | 8 V |
| Drain to Source Breakdown Voltage (Vds) | -20 V |
| Schedule B | 8541210080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 1.5 V |
| FET Type(Transistor Polarity) | P-Channel |
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